DocumentCode :
808679
Title :
An S-VHS compatible 1/3" color FT-CCD imager with low dark current by surface pinning
Author :
Bosiers, Jan T. ; Roks, Edwin ; Peek, Herman L. ; Kleimann, Agnes C. ; Van der Sijde, Arjen G.
Author_Institution :
Philips Image Technol., Philips Res. Lab., Eindhoven, Netherlands
Volume :
42
Issue :
8
fYear :
1995
fDate :
8/1/1995 12:00:00 AM
Firstpage :
1449
Lastpage :
1460
Abstract :
A Frame-Transfer CCD imager for consumer applications has been developed with low dark current by using hole accumulation at the entire Si-SiO2 interface of the image pixel during integration, called "All-Gates Pinning", or AGP. All sensor features, such as vertical anti-blooming and electronic shutter are maintained. The sensor combines thin polysilicon electrodes with mosaic color filters for increased sensitivity and resolution, and uses minimized capacitances and a double metal technology for increased frame shift frequency to obtain low smear. The image pixel operation and optimization are presented, Measurements show a 30 times lower dark current, and 8 times lower fixed-pattern noise with all-gates pinning compared to a conventional device. A frame shift frequency of 15 MHz is achieved. These new features allow the reduction from 2/3" to 1/3" image format without sacrificing the performance.
Keywords :
CCD image sensors; dark conductivity; elemental semiconductors; integrated circuit metallisation; silicon; silicon compounds; video cameras; 0.33 in; 15 MHz; S-VHS compatible; Si-SiO2; all-gates pinning; color FT-CCD imager; consumer applications; consumer camcorders; dark current; double metal technology; electronic shutter; fixed-pattern noise; frame shift frequency; frame-transfer imager; hole accumulation; image format; image pixel; low light-level imaging; minimized capacitances; mosaic color filters; polysilicon electrodes; smear; surface pinning; vertical anti-blooming; Capacitance; Capacitive sensors; Charge coupled devices; Colored noise; Dark current; Electrodes; Filters; Frequency; Pixel; Sensor phenomena and characterization;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.398659
Filename :
398659
Link To Document :
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