Correlation between the low-frequency noise spectral density and the static device parameters of silicon-on-insulator MOSFETs

The empirical relationship between the device transconductance and the input-referred noise spectral density observed on partially depleted SOI n-MOSFETs is examined for other types of devices. As is shown, buried-channel p-MOSFETs processed in the same 1 μm CMOS SOI technology show the same behavior. The exponential dependence is also observed for SDI n-MOSFETs fabricated in a 3 μm CMOS technology, strongly emphasizing the generality of the result. Furthermore, it is valid both in linear operation (weak and strong inversion) and in saturation. The physical back-ground of this correlation is further elaborated and a new relationship is derived for the noise in the subthreshold regime.