Elimination of parasitic bipolar-induced breakdown effects in ultra-thin SOI MOSFETs using narrow-bandgap-source (NBS) structure

Author

Sim, Jai-Hoon ; Choi, Chang-Hoon ; Kim, Kinam

Author_Institution

Div. of Memory, Samsung Electron. Corp., Kyungki, South Korea

Volume

42

Issue

8

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

1495

Lastpage

1502

Abstract

In this paper, we introduce the Si-SiGe narrow bandgap-source (NBS) SOI device structure in order to improve the low drain-to-source breakdown voltage (V_BD) in ultra-thin SOI devices. Reducing the potential barrier of valence band between source and body by applying the SiGe layer at the source region, we can improve the drain-to-source breakdown voltage by suppressing the hole accumulation in the body. As confirmed by 2D simulation results, NBS-SOI devices provide excellent performance compared to conventional SOI devices.

Keywords

Ge-Si alloys; MOSFET; electric breakdown; energy gap; silicon-on-insulator; Si-SiGe; drain-to-source breakdown voltage; hole accumulation suppression; narrow-bandgap-source structure; parasitic bipolar-induced breakdown effects; potential barrier; ultra-thin SOI MOSFET; valence band; CMOS technology; Charge carrier processes; Electric breakdown; Germanium silicon alloys; MOS devices; MOSFETs; NIST; Niobium; Silicon germanium; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.398664

Filename

398664