Title :
Backside illuminated high saturation current partially depleted absorber photodetectors
Author :
Li, X. ; Demiguel, S. ; Li, N. ; Campbell, J.C. ; Tulchinsky, D.L. ; Williams, K.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Abstract :
A high-saturation-current, backside-illuminated In0.53Ga0.47As photodiode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/ W at 1.55 μm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; 1 GHz; 1.55 micron; 100 micron; 199 mA; 24 mA; 48 GHz; 8 micron; In0.53Ga0.47As; backside-illuminated photodiode; partially depleted absorber photodetectors; responsivity; saturation current; small-signal compression current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030927
