An electro-thermal model for metal-oxide-metal antifuses

Author

Zhang, Guobiao ; Hu, Chenming ; Yu, Peter Y. ; Chiang, Steve ; Eltoukhy, Shafy ; Hamdy, Esmat Z.

Author_Institution

Dept. of Phys., California Univ., Berkeley, CA, USA

Volume

42

Issue

8

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

1548

Lastpage

1558

Abstract

In this paper, a complete electro-thermal analysis is presented for the metal-oxide-metal antifuses. The application of the Wiedemann-Franz Law and the thin film effect on thermal and electrical conductivities of metal films were also discussed. Several key parameters for tungsten-oxide-tungsten antifuse were extracted. The reaction temperature between tungsten and oxide was estimated to be around 1300°C. The core resistivity was found to be around 250 μΩ·cm. This model can be readily extended to the other metal-dielectric-metal systems.

Keywords

MIM devices; electric fuses; field programmable gate arrays; modelling; thermal analysis; 1300 C; FPGA application; MOM structure; Wiedemann-Franz Law; core resistivity; electrical conductivit; electro-thermal model; metal-oxide-metal antifuses; reaction temperature; thermal and electrical conductivit; thin film effect; Amorphous silicon; Conductive films; Electrodes; Fuses; Inorganic materials; Temperature; Thermal conductivity; Transistors; Tungsten; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.398671

Filename

398671