Title :
An electro-thermal model for metal-oxide-metal antifuses
Author :
Zhang, Guobiao ; Hu, Chenming ; Yu, Peter Y. ; Chiang, Steve ; Eltoukhy, Shafy ; Hamdy, Esmat Z.
Author_Institution :
Dept. of Phys., California Univ., Berkeley, CA, USA
fDate :
8/1/1995 12:00:00 AM
Abstract :
In this paper, a complete electro-thermal analysis is presented for the metal-oxide-metal antifuses. The application of the Wiedemann-Franz Law and the thin film effect on thermal and electrical conductivities of metal films were also discussed. Several key parameters for tungsten-oxide-tungsten antifuse were extracted. The reaction temperature between tungsten and oxide was estimated to be around 1300°C. The core resistivity was found to be around 250 μΩ·cm. This model can be readily extended to the other metal-dielectric-metal systems.
Keywords :
MIM devices; electric fuses; field programmable gate arrays; modelling; thermal analysis; 1300 C; FPGA application; MOM structure; Wiedemann-Franz Law; core resistivity; electrical conductivit; electro-thermal model; metal-oxide-metal antifuses; reaction temperature; thermal and electrical conductivit; thin film effect; Amorphous silicon; Conductive films; Electrodes; Fuses; Inorganic materials; Temperature; Thermal conductivity; Transistors; Tungsten; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
