Title :
Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric
Author :
Huo, Xiao ; Chen, Kevin J. ; Chan, Philip C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
We have fabricated high-Q copper inductors using low-K benzocyclobutene (BCB) dielectric as an interface layer on standard CMOS silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. The inductors exhibit Q-factors as high as 25 at 2 GHz. The dependence of inductor´s high-frequency performance on inductor´s parameters, such as BCB and copper thickness, has been investigated in detail. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFICs and MMICs.
Keywords :
CMOS integrated circuits; MMIC; Q-factor; UHF integrated circuits; copper; dielectric thin films; electroplated coatings; electroplating; elemental semiconductors; inductors; integrated circuit metallisation; losses; silicon; 0.1 to 16 GHz; 2 GHz; BCB thickness; CMOS Si substrate; Cu; Cu thickness; Q-factors; Si; Si-based high-Q inductors; benzocyclobutene dielectric; electroplated Cu; high-Q Cu inductors; high-frequency performance; high-performance MMICs; high-performance RFICs; inductor fabrication process; interface layer; low-K BCB dielectric; low-cost fabrication process; low-temperature fabrication process; metal ohmic loss suppression; on-chip inductors; post-IC process; substrate loss suppression; Copper; Degradation; Dielectric losses; Dielectric substrates; Employment; Fabrication; Inductors; Q factor; Radiofrequency integrated circuits; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802652
