Title :
Electrically programmable fuse (eFUSE) using electromigration in silicides
Author :
Kothandaraman, C. ; Iyer, Sundar K. ; Iyer, Subramanian S.
Author_Institution :
Infineon Technol. Corp., Hopewell Junction, NY, USA
Abstract :
For the first time we describe a positive application of electromigration, as an electrically programmable fuse device (eFUSE). Upon programming, eFUSE´s show a large increase in resistance that enable easy sensing. The transient device characteristics show that the eFUSE stays in a low resistance state during programming due to the local heating of the fuse link. The programming is enhanced by a device design that uses a large cathode which increases the temperature gradient and minimizes the effect of microstructural variations.
Keywords :
CMOS memory circuits; DRAM chips; electromigration; programmable circuits; redundancy; CMOS integrated circuits; DRAM chips; electrically programmable fuse device; electromigration; fuse link; local heating; low resistance state; redundancy; resistance; silicides; temperature gradient; transient device characteristics; CMOS technology; Cathodes; Contacts; Electric resistance; Electromigration; Fuses; Integrated circuit interconnections; Laser transitions; Microelectronics; Silicides;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802657
