Title :
Design of IGBT with integral freewheeling diode
Author :
Napoli, Ettore ; Spirito, Paolo ; Strollo, Antonio G M ; Frisina, Ferruccio ; Fragapane, Leonardo ; Fagone, Domenico
Author_Institution :
Dept. of Electron. Eng., Naples Univ., Italy
Abstract :
A new power structure integrating a freewheeling diode in the termination region of a punch-through (PT) insulated gate bipolar transistor (IGBT) is presented. The proposed solution requires virtually no silicon area penalty with respect to a standard IGBT. Static and dynamic experimental results show the correct behavior of both IGBT and freewheeling diode. Further, it is shown that the lateral diode surrounding the multicellular IGBT can support IGBT direct current with low on-state voltage drop. The operation mechanisms of the composite structure and design techniques to improve structure dynamic behavior are investigated through two-dimensional numerical device simulations.
Keywords :
insulated gate bipolar transistors; power semiconductor diodes; composite structure; design technique; integral freewheeling diode; lateral diode; multicellular IGBT; on-state voltage drop; power device; punch-through insulated gate bipolar transistor; silicon area penalty; two-dimensional numerical simulation; Circuit simulation; Costs; Current density; Diffusion bonding; Insulated gate bipolar transistors; Numerical simulation; P-i-n diodes; Semiconductor diodes; Silicon; Switching circuits;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.802590
