Scalable etched-pillar, AlAs-oxide defined vertical cavity lasers

Author

Floyd, P.D. ; Thibeault, B.J. ; Coldren, L.A. ; Merz, J.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

32

Issue

2

fYear

1996

fDate

1/18/1996 12:00:00 AM

Firstpage

114

Lastpage

116

Abstract

Etched-pillar, bottom-emitting vertical cavity lasers have been fabricated using lateral oxidation of AlAs. The devices have threshold currents as low as 315 μA for a 4 μm×4 μm, three quantum well active region. Using the data and a numerical model the authors extract excess optical and carrier losses and an effective surface recombination velocity for the devices. The data show that size dependent optical scattering persists as the lasers are scaled to smaller sizes, but lateral carrier leakage is suppressed, allowing for scaling of lasers to small sizes to achieve lower threshold currents

Keywords

III-V semiconductors; aluminium compounds; etching; oxidation; quantum well lasers; surface emitting lasers; surface recombination; 315 muA; AlAs; AlAs-oxide; VCSEL; carrier leakage; carrier losses; etched-pillar bottom-emitting vertical cavity laser; fabrication; lateral oxidation; numerical model; optical losses; optical scattering; quantum well; scaling; surface recombination velocity; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960050

Filename

490870