Title :
Spectral linewidth and resonant frequency characteristics of InGaAsP/InP multiquantum well lasers
Author :
Sasai, Yoichi ; Ohya, Jun ; Ogura, Mototsugu
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
4/1/1989 12:00:00 AM
Abstract :
The spectral linewidth and resonant frequency characteristics of 1.3- mu m InGaAsP/InP multi-quantum-well lasers grown by liquid-phase epitaxy were investigated and compared to those of the conventional double heterostructure (DH) lasers. A decrease in spectral linewidth and an increase in resonant frequency f/sub r/ with decreasing well thickness were observed. Moreover, the linewidth enhancement factor alpha was reduced to approximately 2 for well thicknesses of less than approximately 200 AA, while that of the DH laser was approximately 6. An f/sub r/ of 9 GHz, which is twice as large as that of conventional DH lasers, was achieved at an optical power of 5.3 mW/facet.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; 1.3 micron; 5.3 mW; 9 GHz; III-V semiconductors; InGaAsP-InP; double heterostructure laser; linewidth enhancement factor; liquid-phase epitaxy; multiquantum well lasers; optical power; resonant frequency characteristics; spectral linewidth characteristics; well thickness; DH-HEMTs; Distributed feedback devices; Epitaxial growth; Indium phosphide; Laser feedback; Laser theory; Quantum mechanics; Quantum well devices; Quantum well lasers; Resonant frequency;
Journal_Title :
Quantum Electronics, IEEE Journal of
