• DocumentCode
    809406
  • Title

    Linewidth of laser diodes with nonuniform phase-amplitude α-factor

  • Author

    Arnaud, Jacques

  • Author_Institution
    Equipe de Microoptoelectron. de Montpellier, Univ. of Sci. & Tech. du Languedoc, France
  • Volume
    25
  • Issue
    4
  • fYear
    1989
  • fDate
    4/1/1989 12:00:00 AM
  • Firstpage
    668
  • Lastpage
    677
  • Abstract
    The linewidth of a laser diode having a phase-amplitude factor α that varies arbitrarily along the path is calculated. For simplicity, an ideal single-mode ring-type laser diode with only one wave circulating is considered. The theory is exact in the limit of large injected currents, provided parameters such as the carrier temperature do not vary and the gain or loss per wavelength is small. It is found that when the electron-hole pairs are injected independently of each other (that is, when the pump fluctuations are spatially uncorrelated shot noises) the linewidth is half the value obtained earlier for the linear regime multiplied by (1+α2)av where the round-trip averaging is affected with respect to the reciprocal of the power gain. Specific examples, in particular a sequence of amplifiers and partially reflecting mirrors, are considered
  • Keywords
    laser theory; mirrors; ring lasers; semiconductor junction lasers; amplifiers; carrier temperature; electron-hole pairs; gain per wordlength; injected currents; laser diode linewidth; loss per wavelength; nonuniform phase-amplitude α-factor; partially reflecting mirrors; power gain; pump fluctuations; semiconductor laser; single-mode ring-type laser diode; spatially uncorrelated shot noises; Charge carrier density; Current density; Diode lasers; Ear; Fluctuations; Frequency; Mirrors; Optical materials; Optical resonators; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.17329
  • Filename
    17329