• DocumentCode
    809453
  • Title

    Y-junction and misaligned-stripe diode laser arrays with nonuniform reflective diffraction coupler

  • Author

    Lay, Tsong-Sheng ; Lee, Si-Chen ; Lin, Hao-Hsiung

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    25
  • Issue
    4
  • fYear
    1989
  • fDate
    4/1/1989 12:00:00 AM
  • Firstpage
    689
  • Lastpage
    695
  • Abstract
    The Y-junction structures are analyzed using diffraction theory based on a scattering-matrix representation. In the analysis, the threshold behavior, mode distribution, and stability of the array modes are calculated as a function of various array structures. The oxide-restricted ridge waveguide laser is chosen as the basic laser structure and a simple fabrication process is developed. The output peak-power per facet for a 10-element Y-junction array without coating is over 800 mW and the total differential quantum efficiency reaches 70%. The misaligned-stripe laser exhibits high power of 500 mW per facet and high quantum efficiency of 60%. The fundamental mode operation is achieved for both lasers
  • Keywords
    laser modes; light diffraction; optical couplers; optical waveguides; semiconductor junction lasers; 500 mW; 60 percent; 70 percent; 800 mW; Y-junction structure arrays; diffraction theory; fundamental mode operation; misaligned-stripe diode laser arrays; mode distribution; nonuniform reflective diffraction coupler; output peak power per facet; oxide-restricted ridge waveguide laser; scattering-matrix representation; stability; threshold behavior; total differential quantum efficiency; Diffraction; Diode lasers; Laser modes; Laser theory; Optical arrays; Optical device fabrication; Particle scattering; Semiconductor laser arrays; Stability analysis; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.17332
  • Filename
    17332