Title :
Step-coverage metallisation using selected area evaporation technique for narrow mesa InGaAsP/InP lasers
Author :
Matsuyama, T. ; Furukawa, C. ; Makuta, A. ; Kobayashi, H. ; Ohtsuka, K. ; Tanaka, A. ; Kinoshita, J.
Author_Institution :
Dept. of Laser & Opt. Commun. Device Eng., Toshiba Corp., Kawasaki, Japan
fDate :
1/18/1996 12:00:00 AM
Abstract :
A new low-capacitance narrow mesa-stripe structure for InGaAsP/InP planar buried heterostructure (PBH) DFB lasers is presented. This structure is realised using a newly developed selected area evaporation technique. The electrode layer is metalised on one of the vertical side walls of the narrow mesa, with self-aligned bonding pad connection. The authors report the fabrication of the electrode structure, the device fabrication and its performance and reliability
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor device metallisation; semiconductor lasers; vacuum deposition; InGaAsP-InP; InGaAsP/InP planar buried heterostructure DFB laser; electrode; fabrication; low-capacitance narrow mesa-stripe; reliability; selected area evaporation; self-aligned bonding pad connection; step-coverage metallisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960042
