• DocumentCode
    809676
  • Title

    Interlevel dielectric via etch process monitoring by atomic force microscopy

  • Author

    Howard, A.J. ; Baca, A.G. ; Shul, R.J.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    31
  • Issue
    15
  • fYear
    1995
  • fDate
    7/20/1995 12:00:00 AM
  • Firstpage
    1227
  • Lastpage
    1228
  • Abstract
    The use of AFM for in-line monitoring of an interlevel dielectric via plasma etching step is reported. By comparing etch depths, to via types contacting both Au- and W-based metals, the AFM can non-destructively determine whether micrometre-sized vias have been cleared. Owing to the etch selectivity of the SF6/O2 plasma, the Au-based ohmic metal acts as an etch stop whereas the W-based refractory gate contact continues to etch
  • Keywords
    atomic force microscopy; integrated circuit interconnections; integrated circuit measurement; integrated circuit yield; nondestructive testing; sputter etching; O2; SF6; SF6-O2; atomic force microscopy; etch depths; etch process monitoring; etch selectivity; interlevel dielectric; micrometre-sized vias; nondestructive testing; ohmic metal; plasma etching step; refractory gate contact; via types;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950843
  • Filename
    400330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=809676