Title :
Low loss channel waveguides fabricated in fused silica by germanium ion implantation
Author :
Leech, P.W. ; Kemeny, P.C. ; Ridgway, M.C.
Author_Institution :
Telstra Res. Lab., Clayton, Vic., Australia
fDate :
7/20/1995 12:00:00 AM
Abstract :
The authors report the first low loss channel waveguides (0.10 0.15 dB/cm) formed in fused silica by the implantation of MeV Ge ions. The loss coefficient α was measured as a function of ion dose (8×1013-8×1016 ion/cm2) and annealing temperature (250 to 600°C) at 1300 nm. The as-implanted waveguides exhibited a minimum value of α=0.9 dB/cm at an intermediate range of dose with a reduction to 0.10-0.15 dB/cm after annealing at 500°C
Keywords :
annealing; germanium; ion implantation; optical fabrication; optical losses; optical waveguides; silicon compounds; 1300 nm; 250 to 600 degC; SiO2:Ge; annealing temperature; as-implanted waveguides; ion dose; ion implantation; loss coefficient; low loss channel waveguides; optical waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950848
