• DocumentCode
    809761
  • Title

    Low loss channel waveguides fabricated in fused silica by germanium ion implantation

  • Author

    Leech, P.W. ; Kemeny, P.C. ; Ridgway, M.C.

  • Author_Institution
    Telstra Res. Lab., Clayton, Vic., Australia
  • Volume
    31
  • Issue
    15
  • fYear
    1995
  • fDate
    7/20/1995 12:00:00 AM
  • Firstpage
    1238
  • Lastpage
    1240
  • Abstract
    The authors report the first low loss channel waveguides (0.10 0.15 dB/cm) formed in fused silica by the implantation of MeV Ge ions. The loss coefficient α was measured as a function of ion dose (8×1013-8×1016 ion/cm2) and annealing temperature (250 to 600°C) at 1300 nm. The as-implanted waveguides exhibited a minimum value of α=0.9 dB/cm at an intermediate range of dose with a reduction to 0.10-0.15 dB/cm after annealing at 500°C
  • Keywords
    annealing; germanium; ion implantation; optical fabrication; optical losses; optical waveguides; silicon compounds; 1300 nm; 250 to 600 degC; SiO2:Ge; annealing temperature; as-implanted waveguides; ion dose; ion implantation; loss coefficient; low loss channel waveguides; optical waveguides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950848
  • Filename
    400338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=809761