Title :
Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier
Author :
Ougazzaden, A. ; Sigogne, D. ; Mircea, A. ; Rao, E.V.K. ; Ramdane, A. ; Silvestre, L.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
7/20/1995 12:00:00 AM
Abstract :
The authors report a structure for a polarisation insensitive amplifier at 1.55 μm wavelength using 16 compensated strain InGaAsP/InGaAs quantum wells. A high gain of 27 dB for TE and TM modes has been obtained. Polarisation sensitivity less than 1 dB over 85 nm bandwidth has been measured. These results are among the best reported
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.55 micrometre; 27 dB; InGaAsP-InGaAs; TE mode; TM mode; atmospheric pressure MOVPE growth; optical amplifier; polarisation insensitive amplifier; strain compensated MQW;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950827
