Title :
Butt-jointed DBR laser with 15 nm tunability grown in three MOVPE steps
Author :
Delorme, F. ; Slempkes, S. ; Alibert, G. ; Rose, B. ; Brandon, J.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
7/20/1995 12:00:00 AM
Abstract :
InGaAsP/InP butt-jointed, buried ridge DBR lasers, exhibiting a record 15 nm tuning range, have been realised using only a three-step MOVPE process. The highest number (38) ever reported of regularly spaced wavelength channels is obtained from a two-section DBR laser, in which the passive waveguide was optimised in terms of carrier-induced effective index change and active-passive coupling efficiency
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser tuning; refractive index; ridge waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1523 to 1538 nm; InGaAsP-InP; MOVPE; active-passive coupling efficiency; buried ridge DBR lasers; butt-jointed DBR laser; carrier-induced effective index change; passive waveguide; regularly spaced wavelength channels; tunability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950888
