Title :
Parameter-extraction method for heterojunction bipolar transistors
Author :
Maas, S.A. ; Tait, D.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A method for determining the microwave equivalent-circuit element values of a small-signal heterojunction bipolar transistor (HBT) is described. Most important is the ability to separate the parasitic emitter resistance from the junction resistance. No use of ´cold´ measurements or test patterns is required. The method may also be applicable to homojunction bipolars.<>
Keywords :
equivalent circuits; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; equivalent-circuit element values; heterojunction bipolar transistors; junction resistance; parameter extraction; parasitic emitter resistance; small signal HBT; Bipolar transistors; Circuit analysis; Circuit testing; Electrical resistance measurement; Equivalent circuits; Heterojunction bipolar transistors; Impedance; Parameter extraction; Scattering parameters; Thermal resistance;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
