DocumentCode
810000
Title
AlAs/AlGaAs reflection modulator for visible wavelengths
Author
Egan, R.J. ; Clark, A. ; Jagadish, C. ; Williams, J.S.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume
31
Issue
15
fYear
1995
fDate
7/20/1995 12:00:00 AM
Firstpage
1270
Lastpage
1271
Abstract
The performance of a surface normal modulator operating at visible wavelengths is described. Modulation at these wavelengths is achieved by incorporating aluminium in the well material and increasing the aluminium content in the barrier. Maximum contrast is achieved at 660 nm with a low insertion loss (1.5 dB) and a differential reflectivity of 13% for 13 V
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; reflectivity; semiconductor quantum wells; visible spectra; 1.5 dB; 13 V; 660 nm; AlAs-AlGaAs; MQW devices; barrier; differential reflectivity; insertion loss; maximum contrast; reflection modulator; surface normal modulator; visible wavelengths; well material;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950876
Filename
400360
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