Title :
16% external quantum efficiency from planar microcavity LEDs at 940nm by precise matching of cavity wavelength
Author :
Blondelle, J. ; De Neve, H. ; Demeester, P. ; Van Daele, P. ; Borghs, G. ; Baets, R.
fDate :
7/20/1995 12:00:00 AM
Abstract :
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs 3 QW LEDs are reported. The use of regrowth for cavity resonance tuning and its effect on device performance are demonstrated. The best results obtained include external quantum efficiencies of 16%. At 5mA, 1mW of optical power is delivered with an intensity of 280μW/sr
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; light emitting diodes; semiconductor quantum wells; 1 mW; 16 percent; 5 mA; 940 nm; InGaAs-(Al)GaAs; QW LEDs; cavity resonance tuning; cavity wavelength matching; external quantum efficiency; optical intensity; planar microcavity LEDs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950884
