• DocumentCode
    810127
  • Title

    Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation

  • Author

    Loni, A. ; Simons, A.J. ; Cox, T.I. ; Calcott, P.D.J. ; Canham, L.T.

  • Author_Institution
    Defence Res. Agency, Great Malvern, UK
  • Volume
    31
  • Issue
    15
  • fYear
    1995
  • fDate
    7/20/1995 12:00:00 AM
  • Firstpage
    1288
  • Lastpage
    1289
  • Abstract
    The authors report an all solid state, VLSI compatible, electroluminescent device based on porous silicon with an external quantum efficiency greater than 0.1%, under CW operation. The emission, which is broadband and peaks at 600 nm, is detected above a low threshold current density and voltage of 0.01 Am-2 and 2.3 V, respectively
  • Keywords
    electroluminescent devices; elemental semiconductors; optical dispersion; porous materials; silicon; 2.3 V; 600 nm; CW operation; Si; VLSI compatible; broadband emission; electroluminescent porous device; external quantum efficiency; low threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950831
  • Filename
    400372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=810127