• DocumentCode
    810174
  • Title

    Determination of dispersion of output conductance and transconductance of InP HEMTs using low frequency S-parameter measurements

  • Author

    Klepser, B.-U.H. ; Patrick, W.

  • Author_Institution
    Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
  • Volume
    31
  • Issue
    15
  • fYear
    1995
  • fDate
    7/20/1995 12:00:00 AM
  • Firstpage
    1294
  • Lastpage
    1295
  • Abstract
    A frequency analysis of the output conductance and transconductance of 0.25 μm InP based HEMTs is carried out using S-parameter measurements down to 500 Hz. It is shown that the kink in the output characteristics consists of two ranges of a reduced and an increased drain current and that the DC measured transconductance gm.DC is generally lower than gm.HF. The dispersion of gm is increased for higher drain voltages. It is also shown that the frequency limit of the dispersion of both gd and gm is increased for higher drain source voltages
  • Keywords
    III-V semiconductors; S-parameters; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.25 micron; HEMTs; InP; drain current; drain source voltages; frequency analysis; frequency limit; low frequency S-parameter measurements; output characteristics; output conductance; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950835
  • Filename
    400376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=810174