Design and performance of low-current GaAs MMICs for L-band front-end applications

Author

Imai, Yuhki ; Tokumitsu, Masami ; Minakawa, Akira

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

39

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

209

Lastpage

215

Abstract

GaAs monolithic microwave integrated circuits (MMICs) with very low current and of very small size have been developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB small local oscillator (LO) power of -3 dBm. Total current dissipation of the two MMICs is less than 8 mA with 3-V drain bias voltages

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; mixers (circuits); ultra-high-frequency amplifiers; 11.5 dB; 12.5 dB; 2.5 dB; 3 V; 8 mA; GaAs; L-band front-end applications; LNA; drain bias voltages; low current MMIC; low-noise amplifier; lumped LC elements; mixer; monolithic microwave integrated circuits; total current dissipation; uniplanar configurations; Application specific integrated circuits; Gain; Gallium arsenide; Local oscillators; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.102962

Filename

102962