DocumentCode
810196
Title
Noise in channel doped GaInP/InGaAs HFET devices
Author
Geiger, D. ; Mittermeier, E. ; Dickmann, J. ; Geng, C. ; Scholz, F. ; Kohn, E.
Author_Institution
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Volume
31
Issue
15
fYear
1995
fDate
7/20/1995 12:00:00 AM
Firstpage
1295
Lastpage
1297
Abstract
Quarter-micrometre channel doped GalnP/lnGaAs HFETs with high current density show a noise figure comparable to that of PM-HEMTs (0.6 dB at 12 GHz). Owing to the high linearity of the channel doped device. The noise figure shows an extremely weak dependence on drain current and bias. The absence of DX-centres in the GaInP leads to a pure 1/f noise spectrum without Gaussian shaped generation recombination parts
Keywords
1/f noise; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; semiconductor device noise; 0.25 micron; 0.6 dB; 12 GHz; GaInP-InGaAs; bias; channel doped HFET devices; current density; drain current; linearity; microwave noise figure; pure 1/f noise spectrum;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950870
Filename
400377
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