Title :
Nonlinear GaAs MESFET modeling using pulsed gate measurements
Author :
Paggi, M. ; Williams, Paul H. ; Borrego, Jose M.
Author_Institution :
IBM, Essex Junction, VT, USA
Abstract :
The effects of traps in GaAs MESFETs are studied using a pulsed gate measurement system. The devices are pulsed into the active region for a short period (typically 1 mu s) and are held in the cutoff region for the rest of a 1-ms period. While the devices are on, the drain current is sampled and a series of pulsed gate I-V curves are obtained. The drain current obtained under the pulsed gate conditions for a given V/sub GS/ and V/sub DS/ gives a better representation of the instantaneous current for a corresponding V/sub gs/ and V/sub ds/ in the microwave cycle because of the effects of traps. The static and pulsed gate curves were used in a nonlinear time-domain model to predict harmonic current. The results showed that analysis using pulsed gate curves yielded better predictions of harmonic distortion than analysis based on conventional state I-V curves under large-signal conditions.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric distortion; electron traps; equivalent circuits; gallium arsenide; hole traps; semiconductor device models; solid-state microwave devices; GaAs; III-V semiconductor; MESFET modeling; active region; cutoff region; drain current sampling; harmonic current prediction; harmonic distortion; microwave cycle; microwave frequencies; nonlinear time-domain model; pulsed gate I-V curves; pulsed gate measurements; traps; Gallium arsenide; Harmonic analysis; Intrusion detection; MESFETs; Microwave frequencies; Predictive models; Pulse measurements; Radio frequency; Systems engineering and theory; Time domain analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
