Title :
High-performance Ka-band and V-band HEMT low-noise amplifiers
Author :
Duh, K. H George ; Chao, Pane-Chane ; Smith, Phillip M. ; Lester, Luke F. ; Lee, Benjamin R. ; Ballingall, James M. ; Kao, Ming-Yih
Author_Institution :
General Electric Co., Syracuse, NY, USA
Abstract :
Quarter-micron-gate-length high-electron-mobility transistors (HEMTs) have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies, with minimum noise figures of 1.2 dB and 32 GHz and 1.8 dB at 60 GHz. At Ka-band, two-stage and three-stage HEMT low-noise amplifiers have demonstrated noise figures of 1.7 and 1.9 dB, respectively, with associated gains of 17.0 and 24.0 dB at 32 GHz. At V-band, two stage and three-stage HEMT amplifiers yielded noise figures of 3.2 and 3.6 dB, respectively, with associated gains of 12.7 and 20.0 dB and 60 GHz. The 1-dB-gain compression point of all the amplifiers is greater than +6 dBm. The results clearly show the potential of short-gate-length HEMTs for high-performance millimeter-wave receiver application.<>
Keywords :
high electron mobility transistors; microwave amplifiers; solid-state microwave circuits; 0.25 micron; 1.2 to 3.6 dB; 12.7 to 24 dB; 32 to 60 GHz; EHF; HEMT; Ka-band; LNA; MM-wave devices; V-band; high-electron-mobility transistors; low-noise amplifiers; microwave amplifiers; millimeter-wave frequencies; millimeter-wave receiver application; minimum noise figures; short-gate-length; submicron gates; three-stage; two-stage; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; MODFETs; Millimeter wave technology; Millimeter wave transistors; Noise figure; Thermal resistance; Transconductance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
