Title :
Effects of finger width on large-area InGaAs MSM photodetectors
Author :
Yuang, R.H. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
1/18/1996 12:00:00 AM
Abstract :
The authors show that the capacitance of the metal-semiconductor-metal photodetector can be minimised by using a very small or large finger width, with emphasis on the application for the large-area detector. Taking the quantum efficiency into account, the optimum sensitivity of the detector is obtained for the MSM-PD with very slim lingers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; InGaAs; finger width; large-area MSM photodetectors; metal-semiconductor-metal photodetector; optimum sensitivity; quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960085
