DocumentCode :
810394
Title :
Millimeter-wave asymmetric Fabry-Perot modulators
Author :
Barron, C.C. ; Mahon, C.J. ; Thibeault, B.J. ; Wang, G. ; Jiang, W. ; Coldren, Larry A. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
31
Issue :
8
fYear :
1995
fDate :
8/1/1995 12:00:00 AM
Firstpage :
1484
Lastpage :
1493
Abstract :
We have designed, fabricated, and characterized GaAs-AlGaAs (λ=864 nm) asymmetric Fabry-Perot modulators with ≈37 GHz modulation frequency response, comparable to the fastest waveguide modulators. The modulation response saturates at high optical powers due to saturation of the excitonic absorption and heating effects, but the frequency response is independent of the incident optical intensity, since it depends only on the RC time constant, and not on the carrier transit time. The device design takes advantage of the fact that the quantum-confined Stark effect is more pronounced at some distance from the absorption edge to achieve a modulator with ⩾20 dB contrast and ≈3 dB insertion loss for ±2 V operating voltage, but only 21 fF capacitance. The DC bias used to move the operating point off the absorption edge has the additional benefits of improving the linearity and chirp of the device, as well as the saturation intensity. Here we present measurements of the modulation and photocurrent responses of the modulators, calculate the RC and transit times for the device, analyze the saturation mechanisms, and discuss the linearity and chirp of the device from the perspective of a high-speed digital optical communications system
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; integrated optics; millimetre wave devices; optical losses; quantum confined Stark effect; quantum interference devices; semiconductor quantum wells; 37 GHz; 864 nm; DC bias; GaAs-AlGaAs; absorption edge; chirp; excitonic absorption; frequency response; heating effects; high-speed digital optical communications system; insertion loss; linearity; millimeter-wave asymmetric Fabry-Perot modulators; modulation frequency response; modulation responses; modulator; optical powers; photocurrent responses; quantum-confined Stark effect; saturation intensity; saturation mechanisms; transit times; waveguide modulators; Absorption; Chirp modulation; Digital modulation; Fabry-Perot; Frequency response; High speed optical techniques; Linearity; Optical modulation; Optical saturation; Optical waveguides;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.400401
Filename :
400401
Link To Document :
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