DocumentCode :
810598
Title :
An independently matched parameter SPICE model for GaAs MESFET´s
Author :
Li, Edwin X. ; Scheinberg, Norman ; Stofman, Daniel ; Tompkins, William
Author_Institution :
Anadigics Inc., Warren, NJ, USA
Volume :
30
Issue :
8
fYear :
1995
fDate :
8/1/1995 12:00:00 AM
Firstpage :
872
Lastpage :
880
Abstract :
A GaAs MESFET model is presented that addresses the modeling problem arising from the discrepancy between the derivatives of the dc current and the measured small signal parameters of a GaAs MESFET. This discrepancy traditionally required the user of a non-linear circuit analysis program such as SPICE to trade off the accuracy between the dc analysis and ac analysis. This paper addresses this problem and leads to a solution that completely eliminates the need for such a trade off. Two additional nodes are incorporated into the SPICE MESFET model by providing two extra conducting paths necessary to reconcile the aforementioned discrepancies and to keep the equations self-consistent. In addition, the model allows the user to select different sets of model parameters to independently match Ids, gm, and g ds, An integration scheme to transform the new model back to a 3×3 Y-matrix is employed to accelerate the simulation speed
Keywords :
III-V semiconductors; SPICE; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; AC analysis; DC analysis; GaAs; GaAs MESFETs; SPICE model; Y-matrix; independently matched parameters; integration; nonlinear circuit analysis program; self-consistent equations; simulation; small signal parameters; Acceleration; Circuit analysis; Current measurement; Electrical resistance measurement; Equations; FETs; Frequency; Gallium arsenide; MESFETs; SPICE; Transconductance; Transforms; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.400429
Filename :
400429
Link To Document :
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