Title :
GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer
Author :
Groom, K.M. ; Stevens, B.J. ; Childs, D.T. ; Alexander, R.R. ; Krysa, A.B. ; Roberts, J.S. ; Helmy, A.S. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
Abstract :
The realisation of GaAs-based self-aligned lasers based on a single overgrowth, and avoiding exposure of AlGaAs during fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical fabrication; quantum well lasers; semiconductor growth; In0.17Ga0.83As; InGaP; double quantum well laser; electrical confinement; fabrication process; opto-electronic confinement layer; self-aligned lasers; single lateral mode emission; single semiconductor overgrowth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081236
