Title :
High-power monolithic AlGaN/GaN HEMT switch for X-band applications
Author :
Ciccognani, W. ; De Dominicis, M. ; Ferrari, M. ; Limiti, E. ; Peroni, M. ; Romanini, P.
Author_Institution :
Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome
Abstract :
The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power- handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; X-band; compression phenomenon; frequency 10 GHz; high-power monolithic switch; insertion loss; microstrip technology; power-handling measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081170
