DocumentCode :
810774
Title :
Carrier concentration effects on hot electron noise in n+nn+ Al0.25Ga0.75As devices [microwave transistors]
Author :
de Murcia, M. ; Richard, E. ; Llinares, P. ; Pascal, F. ; Vanbremeersch, J.
Author_Institution :
Centre d´´Electron. Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Volume :
32
Issue :
2
fYear :
1996
fDate :
1/18/1996 12:00:00 AM
Firstpage :
137
Lastpage :
138
Abstract :
High frequency noise of Al0.25Ga0.75As resistors with two different doping levels was measured against electric field. The noise temperatures and the diffusion coefficients are discussed in their relation to carrier concentrations. The results show that l/f noise is observed in the hot carrier range
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; carrier density; doping profiles; electric noise measurement; gallium arsenide; hot carriers; microwave transistors; semiconductor device noise; Al0.25Ga0.75As; carrier concentration effects; diffusion coefficients; doping levels; high frequency noise; hot electron noise; l/f noise; microwave transistors; n+nn+ devices; noise temperatures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960093
Filename :
490885
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=810774
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