Title :
Microwave performance of n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistors
Author :
Bayraktaroglu, Burhan ; Camilleri, Natalino ; Lambert, Steve A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The performance of metalorganic chemical-vapor-deposition (MOCVD)-grown n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistors were compared at microwave frequencies to identify the relative merits of each type of device. The f/sub t/ and f/sub max/ values of devices with 100-nm-thick bases were 22 and 40 GHz for n-p-n transistors and 19 and 25 GHz for p-n-p transistors, respectively. An accurate device model was developed using the measured S-parameter data. The base resistance of the p-n-p transistors, as determined from the model, was about six times lower than that of identical size n-p-n devices. Output-power and power-aided efficiencies of p-n-p devices were found to be half those obtained with n-p-n devices at 10 GHz.<>
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; vapour phase epitaxial growth; 10 to 40 GHz; 100 nm; AlGaAs-GaAs; HBT; III-V semiconductor; MOCVD grown devices; S-parameter data; SHF; base resistance; base thickness; device model; heterojunction bipolar transistors; metalorganic chemical-vapor-deposition; microwave frequencies; n-p-n transistors; p-n-p transistors; power-aided efficiencies; Delay effects; FETs; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Microwave transistors; Optical noise; Power generation; Pulse amplifiers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
