• DocumentCode
    810802
  • Title

    Hybrid field-dependent mobility model for the simulation of power VDMOSTs

  • Author

    Zeng, J. ; Mawby, P.A. ; Towers, M.S. ; Board, K.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
  • Volume
    32
  • Issue
    2
  • fYear
    1996
  • fDate
    1/18/1996 12:00:00 AM
  • Firstpage
    138
  • Lastpage
    140
  • Abstract
    An experimentally verified hybrid model of field-dependent mobility is proposed for the 2-D numerical simulation of power VDMOSTs. With the new scheme, the 2-D simulation of the DC output characteristics agrees very well with the experimental results with a single value of the surface degradation factor
  • Keywords
    carrier mobility; power MOSFET; semiconductor device models; 2D numerical simulation; DC output characteristics; field-dependent mobility; hybrid model; power VDMOSTs; surface degradation factor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960067
  • Filename
    490886
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=810802