Title :
Hybrid field-dependent mobility model for the simulation of power VDMOSTs
Author :
Zeng, J. ; Mawby, P.A. ; Towers, M.S. ; Board, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
fDate :
1/18/1996 12:00:00 AM
Abstract :
An experimentally verified hybrid model of field-dependent mobility is proposed for the 2-D numerical simulation of power VDMOSTs. With the new scheme, the 2-D simulation of the DC output characteristics agrees very well with the experimental results with a single value of the surface degradation factor
Keywords :
carrier mobility; power MOSFET; semiconductor device models; 2D numerical simulation; DC output characteristics; field-dependent mobility; hybrid model; power VDMOSTs; surface degradation factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960067
