Title :
A 156 GHz single-stage GaAs dual-gate FET monolithic analog frequency divider with reduced input threshold power
Author :
Kanazawa, Kunihiko ; Hagio, Masahiro ; Kazumura, Masaru ; Kano, Gota
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
Abstract :
Use of a dual-gate FET mixer and a rejection filter has resulted in a simplification of the circuit configuration and a reduction of the input threshold power, respectively, of an analog frequency divider MMIC. The device exhibits an input threshold power of 1.4 dBm in the operating frequency band from 14.2 GHz to 15.3 GHz. The circuit promises to be very valuable for the development of monolithic phase-locked loops (PLLs).<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; frequency dividers; gallium arsenide; 14.2 to 15.3 GHz; GaAs; III-V semiconductors; MMIC; SHF; dual-gate FET mixer; input threshold power reduction; monolithic PLL; monolithic analog frequency divider; phase-locked loops; single stage configuration; Equivalent circuits; Feedback circuits; Feedback loop; Frequency conversion; Gallium arsenide; Microwave FETs; Microwave communication; Microwave filters; Power amplifiers; Signal design;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
