A New Lateral-IGBT Structure With a Wider Safe Operating Area

Author

Bakeroot, B. ; Doutreloigne, J. ; Vanmeerbeek, P. ; Moens, P.

Author_Institution

IMEC, Ghent Univ.

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

416

Lastpage

418

Abstract

A new lateral insulated gate bipolar transistor (LIGBT) for junction-isolated technologies is presented. The nLIGBT is integrated in an existing smart power technology without changing any process layers. The technology has a 0.35-mum CMOS core and is extended with five process layers in order to handle up to 80 V. The drift region of the nLIGBT is completely surrounded by p⁺ regions, creating a very effective hole bypass or diverter structure. This yields an LIGBT with a very wide safe operating area. The device has a breakdown voltage of 75 V and is able to operate up to 47 V (dc) when the gate is fully open. Furthermore, this device turns off without current tail, resulting in extremely fast turn-off times, which are solely determined by the voltage-rise phase. A true competitor for the quasi-vertical n-type drain extended metal oxide semiconductor (nDEMOS) in this technology is created

Keywords

CMOS integrated circuits; insulated gate bipolar transistors; isolation technology; power semiconductor devices; 0.35 micron; CMOS core; diverter structure; hole bypass; junction-isolated technologies; lateral insulated gate bipolar transistor; lateral-IGBT structure; power semiconductor devices; quasivertical n-type drain metal oxide semiconductor; wider safe operating area; Anodes; CMOS technology; Current density; Insulated gate bipolar transistors; Isolation technology; Power semiconductor devices; Semiconductor optical amplifiers; Substrates; Tail; Voltage; Insulated gate bipolar transistor (IGBT); junction-isolated technology; power semiconductor devices; switching transient;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895402

Filename

4160008