Title :
Millimeter-wave monolithic GaAs IMPATT VCO
Author :
Wang, Nan-Lei ; Stacey, William ; Brooks, Ronald C. ; Donegan, Kathleen ; Hoke, William E.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
A monolithic voltage-controlled oscillator (VCO) has been constructed using a GaAs double-drift Read IMPATT as the active element and a similar diode biased below breakdown as the varactor. The chip produced 120-mW peak power over an electronically controlled tuning range between 47 and 48 GHz. A computer analysis based on characterized circuit parameters has been used to predict the performance of the chip.<>
Keywords :
III-V semiconductors; IMPATT diodes; MMIC; gallium arsenide; microwave oscillators; tuning; varactors; variable-frequency oscillators; 120 mW; 47 to 48 GHz; EHF; GaAs; III-V semiconductors; IMPATT VCO; MM-wave type; MMIC; VFO; double-drift Read IMPATT; electronically controlled tuning range; millimetre wave circuits; monolithic voltage-controlled oscillator; varactor; Circuit optimization; Doping profiles; Electric resistance; Gallium arsenide; Radio frequency; Semiconductor diodes; Tuning; Varactors; Voltage; Voltage-controlled oscillators;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
