Title :
Dual-Bit/Cell SONOS Flash EEPROMs: Impact of Channel Engineering on Programming Speed and Bit Coupling Effect
Author :
Datta, A. ; Kumar, P. Bharath ; Mahapatra, S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai
fDate :
5/1/2007 12:00:00 AM
Abstract :
Programming performance of dual-bit silicon-oxide-nitride-oxide-silicon memories is studied on cells fabricated using different channel engineering schemes. Both halo and compensation implants are shown to impact the programming speed, bit coupling, and read disturb, and can be suitably adjusted to optimize the cell operation. The doping dependence of bit coupling and the programming speed are verified using well-calibrated 2-D device simulations
Keywords :
flash memories; ion implantation; 2D device simulations; bit coupling effect; channel engineering; compensation implants; dual-bit SONOS Flash EEPROM; halo implants; localized charge storage; nonvolatile semiconductor memory; programming performance; programming speed; read disturb; Charge carrier processes; EPROM; Electrons; Flash memory; Implants; Nonvolatile memory; SONOS devices; Semiconductor device doping; Semiconductor memory; Silicon on insulator technology; 2-bit operation; Bit coupling; SONOS; compensation implant; flash; halo implant; localized charge storage; non volatile semiconductor memory (NVSM); program speed; read disturb;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.895406
