Title :
1.55 mu m index/gain coupled DFB lasers with strained layer multiquantum-well active grating
Author :
Li, G.P. ; Makino, Tatsuya ; Moore, R. ; Puetz, N.
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
Abstract :
The fabrication and characterisation results of a novel 1.55 mu m index/gain coupled DFB laser with a strained-layer multiquantum-well active grating are reported. The laser exhibits very clear spectral features due to gain-coupling effects.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.55 micron; 10 mW; 19 mA; CW operation; InGaAsP-InP; clear spectral features; gain-coupling effects; index/gain coupled DFB lasers; output power; single mode oscillation characteristic; strained layer multiquantum-well active grating; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921097
