• DocumentCode
    810984
  • Title

    1.55 mu m index/gain coupled DFB lasers with strained layer multiquantum-well active grating

  • Author

    Li, G.P. ; Makino, Tatsuya ; Moore, R. ; Puetz, N.

  • Author_Institution
    Bell-Northern Res., Ottawa, Ont., Canada
  • Volume
    28
  • Issue
    18
  • fYear
    1992
  • Firstpage
    1726
  • Lastpage
    1727
  • Abstract
    The fabrication and characterisation results of a novel 1.55 mu m index/gain coupled DFB laser with a strained-layer multiquantum-well active grating are reported. The laser exhibits very clear spectral features due to gain-coupling effects.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.55 micron; 10 mW; 19 mA; CW operation; InGaAsP-InP; clear spectral features; gain-coupling effects; index/gain coupled DFB lasers; output power; single mode oscillation characteristic; strained layer multiquantum-well active grating; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921097
  • Filename
    158542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=810984