DocumentCode
811030
Title
A 0.5 to 4 GHz true logarithmic amplifier utilizing monolithic GaAs MESFET technology
Author
Smith, Mark A.
Author_Institution
Armatek Inc., Richardson, TX, USA
Volume
36
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
1986
Lastpage
1990
Abstract
The design of the true logarithmic amplifier is reviewed, and the sensitivity of the circuit´s performance to design or process errors is investigated. A GaAs monolithic dual-sign amplifier stage which has been developed for 0.5- to 4-GHz true logarithmic amplifier applications is described. This bandwidth is significantly greater than that of previously reported true logarithmic amplifier stages. A cascade of six of these stages has resulted in a logarithmic amplifier with a 70-dB dynamic range
Keywords
III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; ultra-high-frequency amplifiers; 0.5 to 4 GHz; GaAs; III-V semiconductors; MESFET technology; MMIC; SHF; UHF; microwave IC; monolithic dual-sign amplifier stage; process errors; sensitivity; six stage cascade; true logarithmic amplifier; Bandwidth; Circuit optimization; Dynamic range; Frequency; Gain; Gallium arsenide; MESFET circuits; Power amplifiers; Process design; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.17443
Filename
17443
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