Title :
A 0.5 to 4 GHz true logarithmic amplifier utilizing monolithic GaAs MESFET technology
Author_Institution :
Armatek Inc., Richardson, TX, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The design of the true logarithmic amplifier is reviewed, and the sensitivity of the circuit´s performance to design or process errors is investigated. A GaAs monolithic dual-sign amplifier stage which has been developed for 0.5- to 4-GHz true logarithmic amplifier applications is described. This bandwidth is significantly greater than that of previously reported true logarithmic amplifier stages. A cascade of six of these stages has resulted in a logarithmic amplifier with a 70-dB dynamic range
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; ultra-high-frequency amplifiers; 0.5 to 4 GHz; GaAs; III-V semiconductors; MESFET technology; MMIC; SHF; UHF; microwave IC; monolithic dual-sign amplifier stage; process errors; sensitivity; six stage cascade; true logarithmic amplifier; Bandwidth; Circuit optimization; Dynamic range; Frequency; Gain; Gallium arsenide; MESFET circuits; Power amplifiers; Process design; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
