A High-Performance Body-Tied FinFET Bandgap Engineered SONOS (BE-SONOS) for nand-Type Flash Memory

Author

Hsu, Tzu-Hsuan ; Lue, Hang Ting ; King, Ya-Chin ; Hsieh, Jung-Yu ; Lai, Erh-Kun ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab., Macronix Int. Co. Ltd, Hsinchu

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

443

Lastpage

445

Abstract

A body-tied FinFET bandgap engineered (BE)-silicon-oxide-nitride-oxide-silicon (SONOS) nand Flash device is successfully demonstrated for the first time. BE-SONOS device with a BE oxide-nitride-oxide barrier is integrated in the FinFET structure with a 30-nm fin width. FinFET BE-SONOS can overcome the unsolvable tradeoff between retention and erase speed of the conventional SONOS. Compared with the current floating-gate Flash devices, FinFET BE-SONOS provides both retention and erase-speed performance, while eliminating the scaling limitations and is, thus, an important candidate for further scaling of nand Flash

Keywords

MOSFET; NAND circuits; flash memories; memory architecture; 30 nm; FinFET BE-SONOS; NAND-type flash memory; bandgap engineered SONOS; body-tied FinFET; erase-speed performance; nitride trapping memory; retention performance; Electron traps; FinFETs; Flash memory; Interference; Laboratories; Nonhomogeneous media; Nonvolatile memory; Photonic band gap; SONOS devices; Tunneling; Bandgap engineered (BE)-SONOS; NAND Flash; body-tied FinFET; nitride trapping memory;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895421

Filename

4160021