Title :
A new approach to the RF power operation of MESFETs
Author :
Halkias, George ; Gerard, Henri ; Crosnier, Yves ; Salmer, Georges
Author_Institution :
Found. for Res. & Technol.-Hellas, Crete, Greece
fDate :
5/1/1989 12:00:00 AM
Abstract :
A large-signal numerical model for a MESFET is described which allows investigations of the behavior of these devices at X-band frequencies under large-signal conditions. The authors of numerical simulations are compared with those of the measurements and provide on improved understanding of the behavior of GaAs MESFETs that operate at microwave frequencies and with high power requirements. The analysis yields some indications about the optimum design of these devices.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; power transistors; semiconductor device models; solid-state microwave devices; GaAs; III-V semiconductor; MESFET; RF power operation; X-band frequencies; large-signal numerical model; microwave frequencies; optimum design; power transistor; Electrons; Gallium arsenide; Impedance; Intrusion detection; MESFETs; Numerical models; Power amplifiers; Power generation; Radio frequency; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
