DocumentCode :
811068
Title :
Extraction of 
-Type Substrate Resistance Based on Three-Port Measurement and the Model Verification up to 110 GHz
Author :
Kang, In Man ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ.
Volume :
28
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
425
Lastpage :
427
Abstract :
An analytical parameter-extraction method for pi-type substrate resistance model of RF MOSFETs based on three-port measurement is presented for the first time. The values of substrate resistance components are extracted directly from the three-port S-parameter measurement data, and the output admittance of the MOSFETs is well matched up to 110 GHz. Using a macromodel with extracted substrate components, it is verified that pi-type substrate resistance model is more accurate than other substrate resistance models
Keywords :
MOSFET; S-parameters; electric resistance measurement; millimetre wave field effect transistors; semiconductor device models; substrates; RF MOSFET; analytical parameter-extraction; macromodel; model verification; pi-type substrate resistance model; three-port S-parameter measurement; CMOS technology; Capacitance; Data mining; Electrical resistance measurement; Equivalent circuits; Immune system; MOSFETs; Radio frequency; Semiconductor device modeling; Substrates; Macromodel; RF MOSFETs; substrate resistance; three-port;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.895395
Filename :
4160025
Link To Document :
