Title :
n-InGaAs Schottky diode with current transport along 2-DEG channel
Author :
Kordos, P. ; Marso, M. ; Fox, A. ; Hollfelder, M. ; Luth, H.
Author_Institution :
Forschungszentrum Julich, Germany
Abstract :
Planar pseudomorphic InGaAs Schottky diodes with current transport along the 2-DEG channel were prepared and their DC properties are described. The I-V behaviour is similar to diodes without 2-DEG (n=1.12, phi B=0.49 eV), but the C-V characteristics show stronger capacitance variation. On double-barrier 2-DEG Schottky diodes the capacitance ratio Cmax/Cmin=42 and the varactor sensitivity S(1 V)=3.75 are obtained and for optimised devices an RC cutoff frequency higher than 2 THz is expected.
Keywords :
III-V semiconductors; Schottky-barrier diodes; capacitance; gallium arsenide; indium compounds; solid-state microwave devices; 2 THz; 2DEG channel; C-V characteristics; DC properties; I-V behaviour; InGaAs-InP; InP substrate; MM-wave technology; RC cutoff frequency; Schottky diode; capacitance ratio; current transport; planar pseudomorphic diodes; varactor sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921074
