DocumentCode :
811120
Title :
Threshold Voltage Shift Due to Mechanical Stress-Enhanced Plasma Process-Induced Damage in 0.13- 
pMOSFET
Author :
Li, Rui ; Kong, Wei-Ran ; Tao, Kai ; Yu, Liu-Jiang ; Huang, Kevin ; Ning, Jiang ; Geng, Chun-Qi ; Wang, Ching-Dong
Author_Institution :
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai
Volume :
28
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
360
Lastpage :
362
Abstract :
Mechanical stress-enhanced plasma process-induced damage (PPID) in 0.13-mum pMOSFET was investigated. The PPID, which was initially charged neutral, became positively charged during hydrogen annealing, thus, changing the PMOS threshold voltage (Vth). Different device structures were designed to evaluate the mechanical stress effects on PPID. The features of these positive charges, including the PPID induced Vth shift, and its channel length dependence were also investigated
Keywords :
MOSFET; annealing; plasma applications; 0.13 micron; PMOS threshold voltage; channel length dependence; hydrogen annealing; mechanical stress; pMOSFET; plasma process induced damage; positive oxide charge; threshold voltage shift; Annealing; CMOS process; CMOS technology; Hydrogen; MOSFET circuits; Plasma applications; Plasma devices; Plasma temperature; Stress; Threshold voltage; Hydrogen anneal; mechanical stress; plasmaprocess-induced damage (PPID); positive oxide charge; threshold voltage shift;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.894644
Filename :
4160029
Link To Document :
