DocumentCode
811140
Title
High efficiency microwave diode oscillators
Author
Javalagi, S. ; Reddy, Veerababu ; Gullapalli, Krishna
Author_Institution
Texas Univ., Austin, TX, USA
Volume
28
Issue
18
fYear
1992
Firstpage
1699
Lastpage
1701
Abstract
Data on the operation of very high efficiency microwave oscillators using AlAs/InGaAs quantum well injection transit (QWITT) diodes are presented. A DC-to-RF power conversion efficiency as high as 50% was achieved, which, to the authors´ knowledge, is the highest efficiency reported for continuous wave (CW) operation of a two terminal semiconductor device.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microwave oscillators; semiconductor diodes; solid-state microwave circuits; transit time devices; 50 percent; AlAs-InGaAs; CW operation; DC-to-RF power conversion efficiency; QWITT diode; microwave diode oscillators; two terminal semiconductor device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921080
Filename
158557
Link To Document