Impacts of Notched-Gate Structure on Contact Etch Stop Layer (CESL) Stressed 90-nm nMOSFET

Author

Lin, Chien-Ting ; Fang, Yean-Kuen ; Yeh, Wen-Kuan ; Lai, Chieh-Ming ; Hsu, Che-Hua ; Cheng, Li-Wei ; Ma, Guang Hwa

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

376

Lastpage

378

Abstract

In this letter, mobility improvements by stress contact etch stop layer (CESL) in a strained 90-nm nMOSFET, with and without notched-gate structure, were studied in detail. Compared to the conventional vertical gate, a device with notched gate shows an extra 7% NMOS I_ON enhancement for the increased stress in the channel region and the less effect of the halo-implanted impurity on channel. Both simulations with TCAD software and measurements confirm that the notched-gate structure efficiently enhances the generation of high tensile stress on the channel region from the CESL and more localized pocket implant

Keywords

MOSFET; carrier mobility; ion implantation; 90 nm; TCAD software; halo-implanted impurity; high tensile stress generation; localized pocket implant; mobility improvements; nMOSFET; notched-gate structure; stress contact etch stop layer; stress engineering; CMOS technology; Etching; Implants; Impurities; MOS devices; MOSFET circuits; Microelectronics; Parasitic capacitance; Stress measurement; Tensile stress; Contact etch stop layer (CESL) stresses; mobility enhancement; notched gate; stress engineering;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895425

Filename

4160031