A Novel Dual-Polarity Nonvolatile Memory

A novel and simple structure that integrates nonvolatile storage and configurability functions in a silicon-on-insulator CMOS approach is reported. The device employs injection of electrons and holes through four bipolar-injection structures into a floating-gate region to change and sense the memory state without utilizing the top control gate. The contacts of the injection structure can serve as the control-gate function. These contacts allow flexible memory configuration to enable multiple injection mechanisms. The writing and erasing can be achieved through avalanche or band-to-band tunneling (BTBT) initiated hot-carrier (electron or hole) injection (HEI or HHI), channel hot-electron (CHE) injection, as well as Fowler-Nordheim tunneling. The HEI that is initiated by a combination of avalanche process and BTBT provides the fastest programming time of 8 ns with a low programming voltage at -13 V