A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series Analysis

Author

Srinidhi, E.R. ; Jarndal, A. ; Kompa, G.

Author_Institution

Dept. of High Frequency Eng., Kassel Univ.

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

343

Lastpage

345

Abstract

This letter mainly focuses on providing theoretical justification for possible gallium-nitride (GaN) device linearity improvement, interpreting the key physical origins of third-order distortion (IMD3). Based on the bias-dependent S-parameter measurement data of field-plate (FP)-free 8times125 mum GaN high-electron mobility transistor (HEMT), IMD3 is modeled using classical Volterra series theory. Through this technique, device diagnosis is carried out for efficiently localizing the distortion behavior. Further, device linearity is shown to improve by appropriately tuning the gate-drain feedback capacitance by taking advantage of FP technology proving the analysis to be a powerful tool for developing GaN HEMT technology

Keywords

III-V semiconductors; S-parameters; Volterra series; gadolinium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 125 micron; 8 micron; GaN; HEMT devices; S-parameter measurement; Volterra series analysis; device diagnosis; device linearity improvement; distortion sources; distortion vectors; field plate; gate-drain feedback capacitance; high-electron mobility transistor; third-order distortion; Appropriate technology; Distortion measurement; Feedback; Gallium compounds; Gallium nitride; HEMTs; Linearity; MODFETs; Minimization methods; Scattering parameters; Active gallium–nitride (GaN) high-electron mobility transistor (HEMT); Volterra model; distortion vectors; field plate (FP); linearity; third-order distortion (IMD3);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895387

Filename

4160045