Title :
Microwave Cl2/H2 discharges for high rate etching of InP
Author :
Constantine, C. ; Barratt, C. ; Pearton, S.J. ; Ren, Fengyuan ; Lothian, J.R.
Author_Institution :
Plasma Therm IP, St. Petersburg, FL, USA
Abstract :
Microwave (2.45 GHz) Cl2/H2 discharges operated in the electron cyclotron resonance condition at low pressure (0.5 mtorr) are shown to yield high-rate (1.5 mu m min-1) plasma etching of InP at 150 degrees C with low additional DC bias (-150 V) on the sample. The etched surface morphology and optical quality, and anisotropy of the resultant features are all strong functions of the Cl2-to-H2 ratio in the discharge.
Keywords :
III-V semiconductors; chlorine; high-frequency discharges; hydrogen; indium compounds; semiconductor technology; sputter etching; -150 V; 0.5 mtorr; 150 degC; 2.45 GHz; InP; anisotropy; electron cyclotron resonance condition; etched surface morphology; high rate etching; low pressure; microwave Cl 2-H 2 discharges; optical quality; plasma etching; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921112
